Silicon-Based Heat-Dissipation Device For Heat-Generating Devices

ABSTRACT

Embodiments of a silicon-based heat-dissipation device and an apparatus including a silicon-based heat-dissipation device are described. In one aspect, an apparatus includes a silicon-based heat-dissipation device which includes a base portion and a protrusion portion. The base portion has a first primary side and a second primary side opposite the first primary side. The protrusion portion is on the first primary side of the base portion and protruding therefrom. The protrusion portion includes multiple fins. Each of at least two immediately adjacent fins of the fins of the protrusion portion has a tapered profile in a cross-sectional view with a first width near a distal end of the respective fin being less than a second width at a base of the respective fin near the base portion of the heat-dissipation device.

CROSS REFERENCE TO RELATED PATENT APPLICATION

The present disclosure claims the priority benefit and is a non-provisional of U.S. Patent Application No. 61/807,655, filed Apr. 2, 2013 and entitled “Silicon-Based Heat Dissipation Device For Heat-Generating Devices,” which is herein incorporated by reference.

TECHNICAL FIELD

The present disclosure generally relates to the field of transfer of thermal energy and, more particularly, removal of thermal energy from electrically-driven devices.

BACKGROUND

There are many applications, ranging from consumer electronics to telecommunications and the like, in which electrically-driven devices (e.g., semiconductor-based integrated circuits) capable of performing various tasks are packed in close proximity in a small form factor to serve various needs. Such electrically-driven devices may include, for example, driver circuits, microprocessors, graphics processors, memory chips, global positioning system (GPS) chips, communications chips, laser diodes including edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs), light-emitting diodes (LEDs), photodiodes, sensors, etc. Many of such electrically-driven devices inevitably generate thermal energy, or heat, in operation and thus are heat sources during operation as well as for a period of time after power off. As the number and complexity of the functionalities performed by such electrically-driven devices continue to increase and as the distance between electrically-driven devices in the small form factor continues to decrease, heat generated by such electrically-driven devices, as heat sources, present technical challenges that need to be addressed.

For one thing, performance, useful lifespan, or both, of an electrically-driven device may be significantly impacted if the heat generated by the device is not adequately dissipated or otherwise removed from the device. Moreover, in many present-day applications, given the close proximity between two or more electrically-driven devices on the same substrate, e.g., printed circuit board (PCB), a phenomenon of thermal coupling between the two or more devices in close proximity may occur and result in the heat generated by one of the devices being transferred to one or more adjacent devices. When thermal coupling occurs, at least a portion of the heat generated by a first electrically-driven devices is transferred to a second electrically-driven device in close proximity due to temperature gradient, such that the temperature of the second electrically-driven device rises to a point higher than it would be when no heat is transferred from the first electrically-driven device to the second electrically-driven device. More specifically, when thermal coupling occurs and when no adequate heat transfer mechanism exists, heat generated by electrically-driven devices in close proximity may detrimentally deteriorate the performance and useful lifespan of some or all of the affected devices. As electrically-driven devices generate heat, they are referred to as heat-generating devices hereinafter.

Metal heat sinks or radiators, based on copper or aluminum for example, have been a dominant heat sink choice for electronics or photonics applications. As the form factor of electronic components (e.g., integrated circuits or IC) gets smaller it is impractical to build a small metal heat sink with a large surface area heat sink. Other problems associated with metal heat sinks include, for example, difficulty in precision alignment in mounting laser diode bars, VCSELs, LEDs or chips in laser diode/VCSEL/LED cooling applications, issues with overall compactness of the package, corrosion of the metallic material in water-cooled applications, difficulty in manufacturing, high-precision fabrication, electrical isolation, etc. Yet, increasing demand for higher power density in small form factor motivates the production of a compact cooling package with fewer or none of the aforementioned issues. Moreover, conventional packages typically use wire bonding to provide electrical power to the electrically-driven device(s) being cooled, but wire bonding may add cost and complexity in manufacturing and may be prone to defects in addition to occupying space unnecessarily.

SUMMARY

Various embodiments disclosed herein pertain to a technique, design, scheme, device and mechanism for isolation of thermal ground for multiple heat-generating devices on a substrate.

According to one aspect, an apparatus may include a silicon-based heat-dissipation device. The silicon-based heat-dissipation device may include a base portion and a protrusion portion. The base portion may have a first primary side and a second primary side opposite the first primary side. The protrusion portion may be on the first primary side of the base portion and may protrude therefrom. The second primary side of the base portion may be configured to have one or more heat-generating devices embedded therein or physically coupled thereto such that at least a portion of heat generated by the one or more heat-generating devices is dissipated to the silicon-based heat-dissipation device by conduction.

In at least one embodiment, the base portion may include a slit that communicatively connects the first primary side and the second primary side of the base portion.

In at least one embodiment, when each of more than one heat-generating devices is embedded in or physically coupled to the base portion, at least a first heat-generating device of the more than one heat-generating devices may be on a first side of the slit and at least a second heat-generating device of the more than one heat-generating devices may be on a second side of the slit opposite the first side of the slit such that the slit severs a direct-line thermal coupling path via conduction through the base portion between the first and the second heat-generating devices.

In at least one embodiment, the slit may include an L-shaped slit.

In at least one embodiment, the protrusion portion of the silicon-based heat-dissipation device may include a plurality of fins.

In at least one embodiment, the plurality of fins may include a plurality of straight fins.

In at least one embodiment, a ratio of a height of the fins, measured from the first primary side of the base portion in a direction perpendicular to the first primary side, to a thickness of each of the fins, measured across a respective one of the fins in a direction parallel to the first primary side of the base portion, may be greater than 5:1.

In at least one embodiment, a ratio of a height of the fins, measured from the first primary side of the base portion in a direction perpendicular to the first primary side, to a thickness of the base portion, measured across the base portion in a direction parallel to the first primary side of the base portion, may be greater than 5:1.

In at least one embodiment, a spacing between every two fins of the fins, measured between respective two fins of the fins in a direction parallel to the first primary side of the base portion, may be greater than or equal to a thickness of each of the fins, measured across a respective one of the fins in the direction parallel to the first primary side of the base portion.

In at least one embodiment, the plurality of fins may include a plurality of pin fins.

In at least one embodiment, the plurality of fins may include a plurality of flared fins.

In at least one embodiment, the apparatus may further include one or more integrated circuits embedded in the second primary side of the base portion or one or more electrically-driven devices physically coupled to the second primary side of the base portion.

In at least one embodiment, the apparatus may further include one or more integrated circuits embedded in the second primary side of the base portion or one or more electrically-driven devices physically coupled to the second primary side of the base portion. At least a first one of the one or more integrated circuits or the one or more electrically-driven devices may be on a first side of the slit. At least a second one of the one or more integrated circuits or the one or more electrically-driven devices may be on a second side of the slit opposite the first side of the slit. The slit may sever a direct-line thermal coupling path via conduction through the base portion between the first one of the one or more integrated circuits or the one or more electrically-driven devices and the second one of the one or more integrated circuits or the one or more electrically-driven devices.

In at least one embodiment, the silicon-based heat-dissipation device may be made of single-crystal silicon.

According to another aspect, an apparatus may include a silicon-based heat-dissipation device. The silicon-based heat-dissipation device may include a base portion and a protrusion portion. The base portion may have a first primary side and a second primary side opposite the first primary side. The protrusion portion may be on the first primary side of the base portion and protruding therefrom. The protrusion portion may include a plurality of fins. Each of at least two immediately adjacent fins of the fins of the protrusion portion may have a tapered profile in a cross-sectional view with a first width near a distal end of the respective fin being less than a second width at a base of the respective fin near the base portion of the heat-dissipation device.

In at least one embodiment, the second primary side of the base portion may be configured to have one or more heat-generating devices embedded therein or physically coupled thereto such that at least a portion of heat generated by the one or more heat-generating devices is dissipated to the silicon-based heat-dissipation device by conduction.

In at least one embodiment, a trench between the at least two immediately adjacent fins may have a relatively flat surface with respect to a horizontal plane defined by the first primary side of the base portion.

In at least one embodiment, a trench between the at least two immediately adjacent fins may have a V-shaped notch with respect to a horizontal plane defined by the first primary side of the base portion.

In at least one embodiment, the apparatus may further include one or more integrated circuits embedded in the second primary side of the base portion or one or more electrically-driven devices physically coupled to the second primary side of the base portion. The base portion may include a slit that communicatively connects the first primary side and the second primary side of the base portion. At least a first one of the one or more integrated circuits or the one or more electrically-driven devices may be on a first side of the slit. At least a second one of the one or more integrated circuits or the one or more electrically-driven devices may be on a second side of the slit opposite the first side of the slit. The slit may sever a direct-line thermal coupling path via conduction through the base portion between the first one of the one or more integrated circuits or the one or more electrically-driven devices and the second one of the one or more integrated circuits or the one or more electrically-driven devices.

In at least one embodiment, the silicon-based heat-dissipation device may be made of single-crystal silicon.

The proposed techniques are further described below in the detailed description. This summary is not intended to identify essential features of the claimed subject matter, nor is it intended for use in determining the scope of the claimed subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of the present disclosure. The drawings illustrate embodiments of the disclosure and, together with the description, serve to explain the principles of the disclosure. It is appreciable that the drawings are not necessarily in scale as some components may be shown to be out of proportion than the size in actual implementation in order to clearly illustrate the concept of the present disclosure.

FIG. 1 is a partial cross-sectional view of a heat-dissipation device in accordance with an embodiment of the present disclosure.

FIG. 2 is a partial cross-sectional view of a heat-dissipation device in accordance with an embodiment of the present disclosure.

FIG. 3 is a partial cross-sectional view of a heat-dissipation device in accordance with an embodiment of the present disclosure.

FIG. 4 is a perspective view of a heat-dissipation device in accordance with an embodiment of the present disclosure.

FIG. 5 is a partial cross-sectional view of the heat-dissipation device of FIG. 4.

FIG. 6 is a perspective top view of a device in accordance with an embodiment of the present disclosure.

FIG. 7 is a perspective bottom view of the device of FIG. 6.

FIG. 8 is a side view of the device of FIG. 6.

FIG. 9 is a perspective top view of a device in accordance with another embodiment of the present disclosure.

FIG. 10 is a perspective bottom view of the device of FIG. 9.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS Overview

A compact heat sink or radiator built with silicon-based material provide a compact and highly efficient heat sink for all electronics applications such as driver circuits, microprocessors, graphics processors, memory chips, GPS chips, communications chips, laser diodes including edge-emitting lasers and VCSELs, LEDs, photodiodes, sensors, etc. One advantage of a silicon-based heat sink or radiator is that it can have a surface area more than ten times that of a typical metal-based heat sink or radiator which may be fabricated by extrusion, stamping or machining process. Besides, the surface quality of the silicon fins of a silicon-based heat sink or radiator can reach an optically polished quality surpassing the surface quality of conventional metal-based heat sinks and radiators. A silicon-based heat sink or radiator does not corrode or become tarnished in atmosphere due to elements of the environment. In contrast, metal-based heat sinks and radiators tend to foul and/or corrode over time. The aforementioned advantages enhance the reliability and thermal dissipation efficiency of silicon-based heat sinks and radiators.

Illustrative Implementations

Each of FIGS. 1-3 respectively illustrates a partial cross-sectional view of a silicon-based heat-dissipation device in accordance with an embodiment of the present disclosure. FIG. 4 illustrates a silicon-based heat-dissipation device 101 in accordance with an embodiment of the present disclosure. FIG. 5 illustrates dimensions associated with the silicon-based heat-dissipation device of FIG. 4. The following description refers to FIGS. 1-5.

Each of FIGS. 1-3 illustrates a respective embodiment of a cross-sectional view of a fin structure of multiple straight fins of a silicon-based heat-dissipation device 101. Due to efficient thermal performance and compact structure of the silicon-based heat-dissipation device 101, a surface area at least ten times that of a typical metal-based heat sink or radiator to interact with air or air-sol cooling can be achieved.

As shown in FIG. 1, in one embodiment, a fin structure 51 of multiple straight fins of silicon-based heat dissipation device 101 includes a protrusion portion 51 a and a base portion 51 b. The protrusion portion 51 a has a number of fins protruding from a horizontal plane 51 c defined by the base portion 51 b. Fins of fin structure 51 have substantially straight and parallel sidewalls. That is, in fin structure 51, a surface of a sidewall of a given one of the fins is substantially parallel to a surface of an opposing sidewall of an immediately adjacent fin. Further, a surface of a sidewall of a given one of the fins is substantially perpendicular to the horizontal plane 51 c. Moreover, as shown in FIG. 1, trenches, i.e., where the protrusion portion 51 a come in contact with the base portion 51 b, of fin structure 51 are relatively flat or horizontal with respect to the horizontal plane 51 c.

As shown in FIG. 2, in one embodiment, a fin structure 52 of multiple straight fins of silicon-based heat dissipation device 101 includes a protrusion portion 52 a and a base portion 52 b. The protrusion portion 52 a has a number of fins protruding from a horizontal plane 52 c defined by the base portion 52 b. Fins of fin structure 52 have sloped sidewalls. That is, in fin structure 52, a surface of a sidewall of a given one of the fins is not parallel to a surface of an opposing sidewall of an immediately adjacent fin. Further, a surface of a sidewall of a given one of the fins is not perpendicular to the horizontal plane 52 c. Referring to FIG. 2, due to the sidewalls of the fins of protrusion portion 52 a being sloped, a spacing, or gap, between every two immediately adjacent fins of protrusion portion 52 a increases in a direction moving from base portion 52 b toward the distal ends of the fins of protrusion portion 52 a. In other words, due to the sloped sidewalls, a spacing or gap between every two immediately adjacent fins is wider near the distal ends of the fins (e.g., at the top as shown in FIG. 2) than it is near the base of the fins (e.g., near the base portion 52 b as shown in FIG. 2). Put differently, given the sloped sidewalls, each of one or more fins of the protrusion portion 52 a has a tapered profile in a cross-sectional view (as shown in FIG. 2) with a first width near the distal end of the respective fin being less than a second width at the base of the respective fin near the base portion 52 b. Moreover, as shown in FIG. 2, trenches, i.e., where the protrusion portion 52 a come in contact with the base portion 52 b, of fin structure 52 may be relatively flat or horizontal with respect to the horizontal plane 52 c. Alternatively, although not shown in FIG. 2, the trenches of fin structure 52 may be notched, e.g., shaped as V-shaped notches as those shown in FIG. 3.

Compared with the fin structure 51 of FIG. 1, fin structure 52 of FIG. 2 tends to improve the aerodynamics for better heat transfer via convection by a fluid, e.g., air blown by one or more fans, flowing between the fins. When temperature in the fins rises and the fluid between the fins, whether flowing through or stagnant, will be warmed up. Fin structure 51 of FIG. 1 tends to have relatively less efficiency in heat transfer from the fins to the fluid, e.g., air, at least for the corner air at the bottom of the trenches in terms of pushing the air out of the protrusion portion 51 a. In contrast, fin structure 52 of FIG. 2 tends to have relatively more efficiency in pushing air out of the bottom of the trenches to come out of the protrusion portion 52 a. The difference in efficiency is in the order of several percentage points.

As shown in FIG. 3, in one embodiment, a fin structure 53 of multiple straight fins of silicon-based heat dissipation device 101 includes a protrusion portion 53 a and a base portion 53 b. The protrusion portion 53 a has a number of fins protruding from a horizontal plane 53 c defined by the base portion 53 b. Fins of fin structure 53 have substantially straight and parallel sidewalls. That is, in fin structure 53, a surface of a sidewall of a given one of the fins is substantially parallel to a surface of an opposing sidewall of an immediately adjacent fin. Further, a surface of a sidewall of a given one of the fins is substantially perpendicular to the horizontal plane 53 c. Moreover, as shown in FIG. 3, trenches, i.e., where the protrusion portion 53 a come in contact with the base portion 53 b, of fin structure 53 are not flat or horizontal with respect to the horizontal plane 53 c. Rather, different from fin structure 51 of FIG. 1, the trenches of fin structure 53 are notched, e.g., shaped as V-shaped notches as those shown in FIG. 3.

Fin structure 53 of FIG. 3 tends to have better heat dissipation performance than that of fin structure 51 of FIG. 1, but worse than that of fin structure 52 of FIG. 2 due to aerodynamics, assuming each of fin structures 51, 52 and 53 has the same amount of surface area for the sidewalls of the fins.

The silicon-based heat-dissipation device 101 shown in FIG. 4 can be fabricated from a piece of single-crystal silicon by etching various structural shapes as shown in FIGS. 1-3. As shown in FIG. 4, the silicon-based heat-dissipation device 101 has a base portion 2 and a protrusion portion 1. The base portion 2 has a first primary side (e.g., the side that faces up in FIG. 4) and a second primary side (e.g., the side that faces down in FIG. 4) opposite the first primary side. The protrusion portion 1 of the silicon-based heat-dissipation device 101 is on the first primary side of the base portion 2 and protrudes therefrom. In the example shown in FIG. 4, the protrusion portion 1 includes multiple straight fins. The multiple straight fins of the protrusion portion 1 may be spaced apart from each other by an equidistant spacing 11. Additionally or alternatively, the protrusion portion 1 may include pin fins and/or flared fins.

As shown in FIG. 5, there are several dimensions associated with the silicon-based heat-dissipation device 101. T1 denotes a thickness of the base portion 2 that is measured across the base portion 2 in a direction parallel to the first primary side of the base portion 2. T2 denotes a height of the protrusion portion 1, or the fins of the protrusion portion 1, that is measured from the first primary side of the base portion 2 in a direction perpendicular to the first primary side of the base portion 2. T3 denotes a width of the spacing 11 between every two adjacent fins of the protrusion portion 1. T4 denotes a thickness of each of the fins of the protrusion portion 1, measured across a respective one of the fins in a direction parallel to the first primary side of the base portion 2.

In one embodiment, the ratio T2:T4 is a large number in order to increase the surface area of the silicon-based heat-dissipation device 101 in a small footprint of silicon base. In order to achieve a high convective cooling in the silicon-based heat-dissipation device 101, the ratio of T2:T4 is greater than 5:1. Similarly, the ratio T2:T1 is greater than 5:1. Moreover, in one embodiment, T3 is greater than or equal to T4. These dimensions and ratios provide an optimum performance of the silicon-based heat-dissipation device 101. For example, if each of the dimensions T3 and T4 is 100 microns with T2 being 500 microns and T1 being 100 microns, then the silicon-based heat-dissipation device 101 would have a large amount of surface area in a compact form factor. However, air flow through the spacing 11 between every two adjacent fins of the protrusion portion 1 may be restricted due to small gap, T3 to ineffectively remove all heat from silicon fin. To maximize thermal convection by air flow through the spacing 11 between every two adjacent fins of the protrusion portion 1, in various implementations the dimension T3 and air speed can be increased to achieve quick removal of heat from the fins of the silicon-based heat-dissipation device 101.

FIGS. 6-8 illustrate a device 100 in accordance with an embodiment of the present disclosure. The following description refers to FIGS. 6-8.

FIG. 6 shows the device 100 which is a monolithic structure of IC chip or Silicon-On-Insulator (SOI) combined with the silicon-based heat-dissipation device 101. Typically integrated circuits are developed or laid-down on a primary side of a silicon wafer, and then the backside of the silicon wafer opposite the primary side is lapped to make a thin silicon IC chip. In one embodiment, the silicon-based heat-dissipation device 101 is built or attached to the backside of the IC or SOI chip to increase the heat dissipation by increasing the surface area of the existing backside of the IC or SOI structure. The silicon-based heat-dissipation device 101 built on the backside of the IC or SOI chip provides more than ten times (10×) of surface area to dissipate heat from the integrated circuits by convection or forced air, compared to conventional metal-based heat sinks or radiators.

As shown in FIGS. 7 and 8, each of heat-generating devices 21-25 is embedded in or physically coupled, mounted or otherwise attached to the second primary side of the base portion 2. Each of heat-generating devices 23 and 25 may be an embedded or doped integrated circuit while each of heat-generating devices 21, 22 and 24 may be a driver chip, microprocessor, graphics processor, memory chip, GPS chip, communications chip, laser diode (edge-emitting or VCSEL), LED, photodiode, sensor or the like. Regardless what the case may be, each of heat-generating devices 21-25 generates heat when powered on for which heat needs to be removed to prolong the operational life and enhance the performance of the heat-generating devices 21-25. One of ordinary skill in the art would appreciate that, although multiple heat-generating devices are shown in FIGS. 7 and 8, in various embodiments the number of heat-generating devices may be more or less depending on the actual implementation.

FIGS. 9 and 10 illustrate a device 200 in accordance with another embodiment of the present disclosure. The following description refers to FIGS. 9 and 10.

The device 200 and the device 100 are similar in many ways. In the interest of brevity, detailed description of differences between the device 200 and the device 100 is provided herein while similarity therebetween is not repeated. As shown in FIGS. 9 and 10, the device 200 includes a silicon-based heat-dissipation device 102 that has a base portion 6 and a protrusion portion 5. The base portion 6 has a first primary side and a second primary side opposite the first primary side. The protrusion portion 5 is on the first primary side of the base portion 6 and protrudes therefrom. The protrusion portion 5 may include multiple fins similar to those of the protrusion portion 1 of the silicon-based heat-dissipation device 101, and thus detailed description thereof is not repeated.

The silicon-based heat-dissipation device 102 includes a slit 12 on the base portion 6 that cuts off, or severs, a direct-line thermal coupling path via conduction through the base portion 6 between a first heat-generating device on one side of the slit 12 and a second heat-generating device on the other side of the slit 12. In one embodiment, the slit 12 may be an L-shaped slit as shown in FIGS. 9 and 10. In other embodiments, instead of a slit, the base portion 6 may include a trench or groove on its first primary side or second primary side.

In the example shown in FIG. 10, each of heat-generating devices 26-29 is embedded in or physically coupled, mounted or otherwise attached to the second primary side of the base portion 6. As shown in FIG. 10, the heat-generating device 26 is on one side of the L-shaped slit 12 while the heat-generating devices 26-28 are on the other side the L-shaped slit 12. The slit 12 provides the function of severing a direct-line thermal coupling path via conduction through the base portion 6 between the heat-generating device 26 and each of the heat-generating devices 27-29. This way, the absolute temperature of each of the heat-generating device 27-29 can be lowered. This arrangement may be suitable, for example, when the heat-generating device 26 (e.g., a microprocessor) generates more heat than each of the heat-generating devices 27-29 during operation. The silicon-based heat-dissipation device 102 may be fabricated on the backside of an IC or SOI chip.

In summary, according to one aspect of the present disclosure, an apparatus may include a silicon-based heat-dissipation device. The silicon-based heat-dissipation device may include a base portion and a protrusion portion. The base portion may have a first primary side and a second primary side opposite the first primary side. The protrusion portion may be on the first primary side of the base portion and may protrude therefrom. The second primary side of the base portion may be configured to have one or more heat-generating devices embedded therein or physically coupled thereto such that at least a portion of heat generated by the one or more heat-generating devices is dissipated to the silicon-based heat-dissipation device by conduction.

In at least one embodiment, the base portion may include a slit that communicatively connects the first primary side and the second primary side of the base portion.

In at least one embodiment, when each of more than one heat-generating devices is embedded in or physically coupled to the base portion, at least a first heat-generating device of the more than one heat-generating devices may be on a first side of the slit and at least a second heat-generating device of the more than one heat-generating devices may be on a second side of the slit opposite the first side of the slit such that the slit severs a direct-line thermal coupling path via conduction through the base portion between the first and the second heat-generating devices.

In at least one embodiment, the slit may include an L-shaped slit.

In at least one embodiment, the protrusion portion of the silicon-based heat-dissipation device may include a plurality of fins.

In at least one embodiment, the plurality of fins may include a plurality of straight fins.

In at least one embodiment, a ratio of a height of the fins, measured from the first primary side of the base portion in a direction perpendicular to the first primary side, to a thickness of each of the fins, measured across a respective one of the fins in a direction parallel to the first primary side of the base portion, may be greater than 5:1.

In at least one embodiment, a ratio of a height of the fins, measured from the first primary side of the base portion in a direction perpendicular to the first primary side, to a thickness of the base portion, measured across the base portion in a direction parallel to the first primary side of the base portion, may be greater than 5:1.

In at least one embodiment, a spacing between every two fins of the fins, measured between respective two fins of the fins in a direction parallel to the first primary side of the base portion, may be greater than or equal to a thickness of each of the fins, measured across a respective one of the fins in the direction parallel to the first primary side of the base portion.

In at least one embodiment, the plurality of fins may include a plurality of pin fins.

In at least one embodiment, the plurality of fins may include a plurality of flared fins.

In at least one embodiment, the apparatus may further include one or more integrated circuits embedded in the second primary side of the base portion or one or more electrically-driven devices physically coupled to the second primary side of the base portion.

In at least one embodiment, the apparatus may further include one or more integrated circuits embedded in the second primary side of the base portion or one or more electrically-driven devices physically coupled to the second primary side of the base portion. At least a first one of the one or more integrated circuits or the one or more electrically-driven devices may be on a first side of the slit. At least a second one of the one or more integrated circuits or the one or more electrically-driven devices may be on a second side of the slit opposite the first side of the slit. The slit may sever a direct-line thermal coupling path via conduction through the base portion between the first one of the one or more integrated circuits or the one or more electrically-driven devices and the second one of the one or more integrated circuits or the one or more electrically-driven devices.

In at least one embodiment, the silicon-based heat-dissipation device may be made of single-crystal silicon.

According to another aspect, an apparatus may include a silicon-based heat-dissipation device. The silicon-based heat-dissipation device may include a base portion and a protrusion portion. The base portion may have a first primary side and a second primary side opposite the first primary side. The protrusion portion may be on the first primary side of the base portion and protruding therefrom. The protrusion portion may include a plurality of fins. Each of at least two immediately adjacent fins of the fins of the protrusion portion may have a tapered profile in a cross-sectional view with a first width near a distal end of the respective fin being less than a second width at a base of the respective fin near the base portion of the heat-dissipation device.

In at least one embodiment, the second primary side of the base portion may be configured to have one or more heat-generating devices embedded therein or physically coupled thereto such that at least a portion of heat generated by the one or more heat-generating devices is dissipated to the silicon-based heat-dissipation device by conduction.

In at least one embodiment, a trench between the at least two immediately adjacent fins may have a relatively flat surface with respect to a horizontal plane defined by the first primary side of the base portion.

In at least one embodiment, a trench between the at least two immediately adjacent fins may have a V-shaped notch with respect to a horizontal plane defined by the first primary side of the base portion.

In at least one embodiment, the apparatus may further include one or more integrated circuits embedded in the second primary side of the base portion or one or more electrically-driven devices physically coupled to the second primary side of the base portion. The base portion may include a slit that communicatively connects the first primary side and the second primary side of the base portion. At least a first one of the one or more integrated circuits or the one or more electrically-driven devices may be on a first side of the slit. At least a second one of the one or more integrated circuits or the one or more electrically-driven devices may be on a second side of the slit opposite the first side of the slit. The slit may sever a direct-line thermal coupling path via conduction through the base portion between the first one of the one or more integrated circuits or the one or more electrically-driven devices and the second one of the one or more integrated circuits or the one or more electrically-driven devices.

In at least one embodiment, the silicon-based heat-dissipation device may be made of single-crystal silicon.

Additional and Alternative Implementation Notes

The above-described embodiments pertain to a technique, design, scheme, device and mechanism for isolation of thermal ground for multiple heat-generating devices on a substrate. Although the embodiments have been described in language specific to certain applications, it is to be understood that the appended claims are not necessarily limited to the specific features or applications described herein. Rather, the specific features and applications are disclosed as example forms of implementing such techniques.

In the above description of example implementations, for purposes of explanation, specific numbers, materials configurations, and other details are set forth in order to better explain the invention, as claimed. However, it will be apparent to one skilled in the art that the claimed invention may be practiced using different details than the example ones described herein. In other instances, well-known features are omitted or simplified to clarify the description of the example implementations.

The described embodiments are intended to be primarily examples. The described embodiments are not meant to limit the scope of the appended claims. Rather, the claimed invention might also be embodied and implemented in other ways, in conjunction with other present or future technologies.

Moreover, the word “example” is used herein to mean serving as an example, instance, or illustration. Any aspect or design described herein as “example” is not necessarily to be construed as preferred or advantageous over other aspects or designs. Rather, use of the word example is intended to present concepts and techniques in a concrete fashion. The term “techniques,” for instance, may refer to one or more devices, apparatuses, systems, methods, articles of manufacture, and/or computer-readable instructions as indicated by the context described herein.

As used in this application, the term “or” is intended to mean an inclusive “or” rather than an exclusive “or.” That is, unless specified otherwise or clear from context, “X employs A or B” is intended to mean any of the natural inclusive permutations. That is, if X employs A; X employs B; or X employs both A and B, then “X employs A or B” is satisfied under any of the foregoing instances. In addition, the articles “a” and “an” as used in this application and the appended claims should generally be construed to mean “one or more,” unless specified otherwise or clear from context to be directed to a singular form. 

What is claimed is:
 1. An apparatus, comprising: a silicon-based heat-dissipation device comprising: a base portion having a first primary side and a second primary side opposite the first primary side; and a protrusion portion on the first primary side of the base portion and protruding therefrom, wherein the second primary side of the base portion is configured to have one or more heat-generating devices embedded therein or physically coupled thereto such that at least a portion of heat generated by the one or more heat-generating devices is dissipated to the silicon-based heat-dissipation device by conduction.
 2. The apparatus of claim 1, wherein the base portion comprises a slit that communicatively connects the first primary side and the second primary side of the base portion.
 3. The apparatus of claim 2, wherein, when each of more than one heat-generating devices is embedded in or physically coupled to the base portion, at least a first heat-generating device of the more than one heat-generating devices is on a first side of the slit and at least a second heat-generating device of the more than one heat-generating devices is on a second side of the slit opposite the first side of the slit such that the slit severs a direct-line thermal coupling path via conduction through the base portion between the first and the second heat-generating devices.
 4. The apparatus of claim 2, wherein the slit comprises an L-shaped slit.
 5. The apparatus of claim 1, wherein the protrusion portion of the silicon-based heat-dissipation device comprises a plurality of fins.
 6. The apparatus of claim 5, wherein the plurality of fins comprises a plurality of straight fins.
 7. The apparatus of claim 6, wherein a ratio of a height of the fins, measured from the first primary side of the base portion in a direction perpendicular to the first primary side, to a thickness of each of the fins, measured across a respective one of the fins in a direction parallel to the first primary side of the base portion, is greater than 5:1.
 8. The apparatus of claim 6, wherein a ratio of a height of the fins, measured from the first primary side of the base portion in a direction perpendicular to the first primary side, to a thickness of the base portion, measured across the base portion in a direction parallel to the first primary side of the base portion, is greater than 5:1.
 9. The apparatus of claim 6, wherein a spacing between every two fins of the fins, measured between respective two fins of the fins in a direction parallel to the first primary side of the base portion, is greater than or equal to a thickness of each of the fins, measured across a respective one of the fins in the direction parallel to the first primary side of the base portion.
 10. The apparatus of claim 5, wherein the plurality of fins comprises a plurality of pin fins.
 11. The apparatus of claim 5, wherein the plurality of fins comprises a plurality of flared fins.
 12. The apparatus of claim 1, further comprising: one or more integrated circuits embedded in the second primary side of the base portion or one or more electrically-driven devices physically coupled to the second primary side of the base portion.
 13. The apparatus of claim 2, further comprising: one or more integrated circuits embedded in the second primary side of the base portion or one or more electrically-driven devices physically coupled to the second primary side of the base portion, wherein at least a first one of the one or more integrated circuits or the one or more electrically-driven devices is on a first side of the slit, wherein at least a second one of the one or more integrated circuits or the one or more electrically-driven devices is on a second side of the slit opposite the first side of the slit, and wherein the slit severs a direct-line thermal coupling path via conduction through the base portion between the first one of the one or more integrated circuits or the one or more electrically-driven devices and the second one of the one or more integrated circuits or the one or more electrically-driven devices.
 14. The apparatus of claim 1, wherein the silicon-based heat-dissipation device is made of single-crystal silicon.
 15. An apparatus, comprising: a silicon-based heat-dissipation device comprising: a base portion having a first primary side and a second primary side opposite the first primary side; and a protrusion portion on the first primary side of the base portion and protruding therefrom, the protrusion portion comprising a plurality of fins, wherein each of at least two immediately adjacent fins of the fins of the protrusion portion has a tapered profile in a cross-sectional view with a first width near a distal end of the respective fin being less than a second width at a base of the respective fin near the base portion of the heat-dissipation device.
 16. The apparatus of claim 15, wherein the second primary side of the base portion is configured to have one or more heat-generating devices embedded therein or physically coupled thereto such that at least a portion of heat generated by the one or more heat-generating devices is dissipated to the silicon-based heat-dissipation device by conduction.
 17. The apparatus of claim 15, wherein a trench between the at least two immediately adjacent fins has a relatively flat surface with respect to a horizontal plane defined by the first primary side of the base portion.
 18. The apparatus of claim 15, wherein a trench between the at least two immediately adjacent fins has a V-shaped notch with respect to a horizontal plane defined by the first primary side of the base portion.
 19. The apparatus of claim 15, further comprising: one or more integrated circuits embedded in the second primary side of the base portion or one or more electrically-driven devices physically coupled to the second primary side of the base portion, wherein the base portion comprises a slit that communicatively connects the first primary side and the second primary side of the base portion, wherein at least a first one of the one or more integrated circuits or the one or more electrically-driven devices is on a first side of the slit, wherein at least a second one of the one or more integrated circuits or the one or more electrically-driven devices is on a second side of the slit opposite the first side of the slit, and wherein the slit severs a direct-line thermal coupling path via conduction through the base portion between the first one of the one or more integrated circuits or the one or more electrically-driven devices and the second one of the one or more integrated circuits or the one or more electrically-driven devices.
 20. The apparatus of claim 15, wherein the silicon-based heat-dissipation device is made of single-crystal silicon. 